Methods for depositing a conformal metal or metalloid silicon nitride film
US12163224B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 6, 2016 |
| Grant date | Dec 10, 2024 |
| Priority date | — |
| Expiry date | Oct 6, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45531
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Described herein are methods for forming a conformal Group 4, 5, 6, 13 metal or metalloid doped silicon nitride film. In one aspect, there is provided a method of forming an aluminum silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one aluminum precursor which reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing into the reactor an organoaminosilane precursors to react on at least a portion of the surface of the substrate to provide a chemisorbed layer; introducing a nitrogen source and an inert gas into the reactor to react with at least a portion of the chemisorbed layer; and optionally purge the reactor with an inert gas; and wherein the steps are repeated until a desired thickness of the aluminum nitride film is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.