Yves Chabal
6Patents
3h-index
10Co-inventors
54Inventor score
Filing activity: Jun 10, 1998 → Oct 10, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6723581B1 | Semiconductor device having a high-K gate dielectric and method of manufacture thereof | Electricity | 29 | Expired |
| US6388290B1 | Single crystal silicon on polycrystalline silicon integrated circuits | Electricity | 11 | Expired |
| US6825538B2 | Semiconductor device using an insulating layer having a seed layer | Electricity | 6 | Expired |
| US7223677B2 | Process for fabricating a semiconductor device having an insulating layer formed over a semiconductor substrate | Electricity | 1 | Expired |
| US11173470B2 | Storing molecule within porous materials with a surface molecular barrier layer | Emerging Cross-Sectional Technologies | 0 | Active |
| US12163224B2 | Methods for depositing a conformal metal or metalloid silicon nitride film | Chemistry; Metallurgy | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.