System, method, and program product for manufacturing a photomask
US12164225B2 · kind B2 · utility
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2References
18Claims
0Family size
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Key dates
| Filing date | Apr 30, 2021 |
| Grant date | Dec 10, 2024 |
| Priority date | — |
| Expiry date | Sep 11, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30148
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods and systems for building a photomask from obtained pattern information relating to a photomask that exhibits defects on wafer. Spatial domain analysis is conducted on the pattern information so that corrective photomask structures can be generated and applied to a photomask layout. A photomask is built using the corrective photomask structures. The photomask is verified for effectiveness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.