Semiconductor device manufacturing method
US12165882B2 · kind B2 · utility
Inventors
Key dates
| Filing date | May 20, 2020 |
| Grant date | Dec 10, 2024 |
| Priority date | — |
| Expiry date | Jul 29, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/96
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing a semiconductor device including: providing a temporary fixing laminate having a supporting substrate; machining a semiconductor member that is temporarily fixed to the supporting substrate; and separating the semiconductor member from the supporting substrate by irradiating the temporary fixing laminate with light from a side of a rear surface of the supporting substrate. A plurality of the irradiation target regions set at the rear surface are sequentially irradiated with light, and each of the irradiation target regions includes a part of the rear surface. The irradiation target regions adjacent to each other partially overlap with each other as viewed from a direction perpendicular to the rear surface, and a region in which the plurality of the irradiation target regions are combined includes the entire rear surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.