Dielectric fins with air gap and backside self-aligned contact
US12166071B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2022 |
| Grant date | Dec 10, 2024 |
| Priority date | — |
| Expiry date | Nov 19, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor structure includes a power rail, a dielectric layer over the power rail, a first source/drain feature over the dielectric layer, a via structure extending through the dielectric layer and electrically connecting the first source/drain feature to the power rail, and two dielectric fins disposed on both sides of the first source/drain feature. Each of the dielectric fins includes two seal spacers, a dielectric bottom cover between bottom portions of the seal spacers, a dielectric top cover between top portions of the seal spacers, and an air gap surrounded by the seal spacers, the dielectric bottom cover, and the dielectric top cover.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.