Semiconductor device and methods of forming the same
US12166076B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2021 |
| Grant date | Dec 10, 2024 |
| Priority date | — |
| Expiry date | Jan 25, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first channel region, a second channel region, and a first insulating fin, the first insulating fin being interposed between the first channel region and the second channel region. The first insulating fin includes a lower portion and an upper portion. The lower portion includes a fill material. The upper portion includes a first dielectric layer on the lower portion, the first dielectric layer being a first dielectric material, a first capping layer on the first dielectric layer, the first capping layer being a second dielectric material, the second dielectric material being different than the first dielectric material, and a second dielectric layer on the first capping layer, the second dielectric layer being the first dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.