SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer
US12166087B2 · kind B2 · utility
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21Claims
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Key dates
| Filing date | Nov 10, 2021 |
| Grant date | Dec 10, 2024 |
| Priority date | — |
| Expiry date | May 6, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02579
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A SiC epitaxial wafer of the present invention includes a SiC single crystal substrate, and a high concentration layer that is provided on the SiC single crystal substrate and has an average value of an n-type doping concentration of 1×1018/cm3 or more and 1×1019/cm3 or less, and in-plane uniformity of the doping concentration of 30% or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.