Semiconductor device and method for manufacturing the same
US12166102B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2020 |
| Grant date | Dec 10, 2024 |
| Priority date | — |
| Expiry date | Jun 5, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
A nitride-based semiconductor device includes a substrate, a buffer, a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a S/D electrode, a second S/D electrode, and a gate electrode. The buffer is disposed over the substrate and includes at least one layer of a nitride-based semiconductor compound doped with an acceptor at a top-most portion of the buffer. The first and second nitride-based semiconductor layers are disposed over the buffer. The first S/D electrode is disposed over the second nitride-based semiconductor layer, in which the first S/D electrode extends downward to a position lower than the first nitride-based semiconductor layer, so as to form at least one first interface with the top-most portion of the buffer, making contact with the at least one layer of the nitride-based semiconductor compound. The second S/D electrode and the gate electrode are disposed over the second nitride-based semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.