Semiconductor device
US12166132B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2022 |
| Grant date | Dec 10, 2024 |
| Priority date | — |
| Expiry date | Jun 9, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6757
Abstract
A semiconductor device including a conductive line on a substrate, a first gate electrode on the conductive line, a second gate electrode separated by a gate isolation insulating layer on the first gate electrode, a first channel layer on a side surface of the first gate electrode, with a first gate insulating layer therebetween, a first source/drain region on another side surface of the first gate electrode, a second channel layer on another side surface of the second gate electrode on a side that is opposite to the first channel layer, with a second gate insulating layer therebetween, a second source/drain region on the second channel layer, and a third source/drain region on the first channel layer and on a side surface of the second gate electrode on a same side as the first channel layer may be provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.