Growth of A-B crystals without crystal lattice curvature
US12168839B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Apr 8, 2020 |
| Grant date | Dec 17, 2024 |
| Priority date | — |
| Expiry date | Apr 8, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A III-V-, IV-IV- or II-VI-compound single crystal comprising III-, IV- or II-precipitates and/or unstoichiometrical III-V-, IV-VI-, or II-VI-inclusions, wherein concentration of the respective precipitates and/or inclusions is no more than 1×104 cm−3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.