Patent · US Active

Growth of A-B crystals without crystal lattice curvature

US12168839B2 · kind B2 · utility

0Cited by
2References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 8, 2020
Grant dateDec 17, 2024
Priority date
Expiry dateApr 8, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/0262
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A III-V-, IV-IV- or II-VI-compound single crystal comprising III-, IV- or II-precipitates and/or unstoichiometrical III-V-, IV-VI-, or II-VI-inclusions, wherein concentration of the respective precipitates and/or inclusions is no more than 1×104 cm−3.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.