Operating method for a memory, a memory and a memory system
US12170116B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2022 |
| Grant date | Dec 17, 2024 |
| Priority date | — |
| Expiry date | May 27, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for operating a memory is provided, including, for example, obtaining a set of read voltages, each of which can include an initial voltage value and an offset voltage value with a certain offset relative to the initial voltage value. The initial voltage value in each of the set of read voltages can be a preset read voltage for distinguishing two adjacent memory states of memory cells of the memory. The operating method can further include performing read operations respectively based on the initial voltage values and the offset voltage values, obtaining the quantity of memory cells in which a read result corresponding to each voltage value meets set conditions, determining a difference between the two quantities corresponding to every two adjacent voltage values belonging to the same set of read voltages, and determining an optimal read voltage for distinguishing the two adjacent memory states based on the difference.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.