Substrate processing apparatus and substrate processing method
US12170209B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2021 |
| Grant date | Dec 17, 2024 |
| Priority date | — |
| Expiry date | Jul 15, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32134
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate processing apparatus includes: at least one processing part for etching a polysilicon film or an amorphous silicon film formed on a substrate using an alkaline chemical liquid; a reservoir configured to recover and store the chemical liquid used in the at least one processing part; processing lines configured to supply the chemical liquid stored in the reservoir to the at least one processing part; a circulation line configured to take out the chemical liquid from the reservoir and to return the same to the reservoir; and a first gas supply line connected to the circulation line and configured to supply an inert gas to the circulation line. The circulation line includes an ejection port configured to eject a mixed fluid of the inert gas supplied by the first gas supply line and the chemical liquid taken out from the reservoir into the chemical liquid stored in the reservoir.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.