Method for separating dies from a semiconductor substrate

US12170226B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Franz-Josef Pichler · Villach, AT
• Benjamin Bernard · Karlsruhe, DE
• Mario Stefenelli · Freiberg, DE

Key dates

• Filing date: Mar 28, 2024
• Grant date: Dec 17, 2024
• Expiry date: Mar 28, 2044

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for separating dies from a semiconductor substrate having dies adjoining a first surface of the substrate includes: attaching the substrate to a carrier via the first surface; generating first modifications by introducing laser irradiation into an interior of the substrate via a second surface of the substrate, the first modifications extending between the first surface and a vertical level in the interior that is being spaced from the second surface, the first modifications laterally surrounding the dies; generating second modifications by introducing laser irradiation into the interior via the second surface, the second modifications sub-dividing the substrate into a first part between the first surface and the second modifications, and a second part between the second surface and the second modifications; separating the parts along a first separation area defined by the second modifications; and separating the dies along a second separation area defined by the first modifications.