Method for manufacturing semiconductor device
US12174529B2 · kind B2 · utility
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4References
20Claims
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Key dates
| Filing date | Jul 6, 2022 |
| Grant date | Dec 24, 2024 |
| Priority date | — |
| Expiry date | Jul 6, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2119/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device is provided. The method includes the following operations. A first layout including a plurality of first features is provided. A modified second layout is determined. The modified second layout includes a plurality of modified features separated from each other, and each of the plurality of modified features respectively overlaps each of the plurality of first features. The modified second layout is outputted to a photomask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.