Self-referenced and regulated sensing solution for phase change memory with ovonic threshold switch
US12176030B2 · kind B2 · utility
0Cited by
2References
18Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Dec 11, 2023 |
| Grant date | Dec 24, 2024 |
| Priority date | — |
| Expiry date | Dec 11, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/76
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for operating a sense amplifier in a one-switch one-resistance (1S1R) memory array, includes: generating a regulated full voltage and a regulated half voltage; applying the regulated full voltage and regulated half voltage to selected and unselected bit lines of the 1S1R memory array during read operations as an applied read voltage; and inducing and compensating for a sneak-path current during read operations by adjusting the applied read voltage based on the cell state of an accessed bit cell and an amplitude of the sneak-path current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.