Memory device for controlling word line voltage and operating method thereof
US12176036B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2022 |
| Grant date | Dec 24, 2024 |
| Priority date | — |
| Expiry date | Mar 9, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device and an operating method thereof adjust a slope of a word line voltage. The memory device includes a memory cell array including a plurality of cell strings, a voltage generating circuit configured to generate a word line voltage provided to a plurality of word lines, and a control logic configured to output a slope control signal adjusting a voltage level variation characteristic of the word line voltage provided from the voltage generating circuit, wherein, during a prepulse period of a read operation of the memory device, a slope of a first word line voltage provided to an edge group including one or more word lines, the edge group adjacent to a string selection line is greater than a slope of a second word line voltage provided to a center group including one or more word lines in a center region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.