Method for manufacturing a semiconductor using slurry
US12176217B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | May 17, 2023 |
| Grant date | Dec 24, 2024 |
| Priority date | — |
| Expiry date | Jun 15, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F3/04
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method for manufacturing a semiconductor. The method includes: forming a metal oxide layer over a gate structure over a substrate; forming a dielectric layer over the metal oxide layer; forming a metal layer over the metal oxide layer; and performing a chemical mechanical polish (CMP) operation to remove a portion of the dielectric layer and a portion of the metal layer, the CMP operation stopping at the metal oxide layer, wherein a slurry used in the CMP operation includes a ceria compound. The present disclosure also provides a method for planarizing a metal-dielectric surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.