Structures for a laterally-diffused metal-oxide-semiconductor transistor
US12176395B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2024 |
| Grant date | Dec 24, 2024 |
| Priority date | — |
| Expiry date | Apr 11, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Structures for a laterally-diffused metal-oxide-semiconductor device and methods of forming a structure for a laterally-diffused metal-oxide-semiconductor device. The structure comprises a drain and a source in a semiconductor substrate. The source includes a source region having a first terminating end, a second terminating end, and a length between the first terminating end and the second terminating end. The structure further comprises a shallow trench isolation region in the semiconductor substrate. The shallow trench isolation region surrounds the drain. The structure further comprises a gate that surrounds the shallow trench isolation region and the drain. The gate has a side section between the drain and the source region, the side section of the gate has a width, and the gate has a length in a direction transverse to the width. The length of the source region is substantially equal to the length of the gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.