Semiconductor structure with an air gap and method of forming the same
US12176440B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 3, 2021 |
| Grant date | Dec 24, 2024 |
| Priority date | — |
| Expiry date | Jan 22, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/679
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure and a method of forming the semiconductor structure are provided. The method of forming the semiconductor structure includes forming a floating gate layer on a substrate. A trench is formed in the floating gate layer and the substrate. A first dielectric layer is formed in the trench. A second dielectric layer is formed on the first dielectric layer. A third dielectric layer is formed on the second dielectric layer. A first sacrificial layer is formed on the third dielectric layer. A dielectric stack is formed on the first sacrificial layer. A control gate layer is formed on the dielectric stack. The first sacrificial layer is removed to form an air gap between the third dielectric layer and the dielectric stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.