Nonvolatile memory device
US12178043B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 16, 2021 |
| Grant date | Dec 24, 2024 |
| Priority date | — |
| Expiry date | Apr 4, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/35
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device may include a substrate; a first stacked structure on the substrate; a second stacked structure on the first stacked structure; a channel structure including a first portion passing through the first stacked structure and a second portion passing through the second stacked structure; and a filling structure including a first portion passing through the first stacked structure and extending in a first horizontal direction and a second portion passing through the second stacked structure and extending in the first horizontal direction. The upper end of the first portion of the filling structure may be at a same height as the upper end of the first portion of the channel structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.