Geunwon Lim
25Patents
3h-index
25Co-inventors
55Inventor score
Filing activity: Dec 17, 2018 → Jul 7, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10964714B2 | Three-dimensional semiconductor memory device | Electricity | 7 | Active |
| US10665606B2 | Three-dimensional semiconductor memory devices | Electricity | 4 | Active |
| US10910396B2 | Three-dimensional semiconductor memory devices | Electricity | 3 | Active |
| US11069698B2 | Three-dimensional semiconductor memory device | Electricity | 3 | Active |
| US11362105B2 | Vertical memory device with support layer | Electricity | 1 | Active |
| US11233004B2 | Semiconductor device having a stacked structure | Electricity | 1 | Active |
| US11271003B2 | Semiconductor devices including stack structure having gate region and insulating region | Electricity | 1 | Active |
| US11985820B2 | Semiconductor devices and data storage systems including the same | Electricity | 1 | Active |
| US11877451B2 | Vertical memory devices | Electricity | 0 | Active |
| US12021022B2 | Semiconductor device having a stacked structure | Electricity | 0 | Active |
| US12167601B2 | Three-dimensional (3D) semiconductor memory device | Electricity | 0 | Active |
| US12178043B2 | Nonvolatile memory device | Electricity | 0 | Active |
| US10861876B2 | Three-dimensional semiconductor memory devices | Electricity | 0 | Active |
| US11637121B2 | Three-dimensional (3D) semiconductor memory device | Electricity | 0 | Active |
| US12002511B2 | Semiconductor devices and electronic systems including the same | Electricity | 0 | Active |
| US11616076B2 | Three-dimensional semiconductor memory device | Electricity | 0 | Active |
| US11640922B2 | Gap-fill layers, methods of forming the same, and semiconductor devices manufactured by the methods of forming the same | Electricity | 0 | Active |
| US11257708B2 | Gap-fill layers, methods of forming the same, and semiconductor devices manufactured by the methods of forming the same | Electricity | 0 | Active |
| US12137555B2 | Semiconductor devices including stack structure having gate region and insulating region | Electricity | 0 | Active |
| US11276706B2 | Vertical memory devices and methods of manufacturing the same | Electricity | 0 | Active |
| US11587940B2 | Three-dimensional semiconductor memory devices | Electricity | 0 | Active |
| US11980028B2 | Semiconductor device and data storage system including the same | Physics | 0 | Active |
| US11744066B2 | Semiconductor devices including stack structure having gate region and insulating region | Electricity | 0 | Active |
| US11917819B2 | Three-dimensional semiconductor memory device | Electricity | 0 | Active |
| US12310021B2 | Vertical memory device with multiple support layers | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.