Methods of forming low resistivity titanium nitride thin film in horizontal vias and related devices

US12180583B2 · kind B2 · utility

Assignees

• The Regents of the University of California · US
• Merck Patent GmbH · DE

Inventors

• Andrew C. Kummel · San Diego, US
• Cheng-Hsuan Kuo · San Diego, US
• SeongUk Yun · Carlsbad, US
• Ravindra KANJOLIA · North Andover, US
• Mansour Moinpour · Saratoga, US
• Daniel Moser · Manitowoc, US

Key dates

• Filing date: Dec 6, 2022
• Grant date: Dec 31, 2024
• Expiry date: Apr 5, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76843
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method of forming a conformal layer including TiN in a via includes introducing a precursor into a reaction chamber according to a first exposure schedule. The precursor includes non-halogenated metal-organic titanium. The first exposure schedule indicates precursor exposure periods. Each precursor exposure period is associated with a particular duration of time and a particular duty cycle over which to introduce the precursor during the particular duration of time. The method includes introducing a co-reactant into the reaction chamber according to a second exposure schedule. The co-reactant includes nitrogen. The second exposure schedule indicates co-reactant exposure periods. Each co-reactant exposure period is associated with a particular duration of time and a particular duty cycle over which to introduce the co-reactant during the particular duration of time. The method includes providing the conformal layer including TiN in the via based on said introducing the precursor and the co-reactant.