Device and method for ensuring planarity of a semiconductor wafer during epitaxial growth
US12180592B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2020 |
| Grant date | Dec 31, 2024 |
| Priority date | — |
| Expiry date | Nov 30, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/26
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device to ensure planarity of a semiconductor wafer during growth at an increased temperature in a growth chamber arranged in a reactor housing where the device includes a growth chamber having a port to allow the deposition of at least one wafer on a rotating susceptor in the growth chamber and the withdrawal of the wafer. The growth chamber has an inlet channel for a supply of process gases and an outlet channel for a discharge of not consumed process gases to create a process gas flow between said channels. Separate heaters are adjacent to the growth chamber to heat the rotating wafer with individually controlled heating zones both above and under the wafer. An instrument measures the bending of the wafer, and an automatic control circuit uses data from temperature sensors or measured data of power supplied to the heaters and the instrument measuring bending of the wafer to change the temperature in said temperature zones so that bending of the wafer is minimized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.