Patent · US Active

Memory circuits and devices, and methods thereof

US12183397B2 · kind B2 · utility

0Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 17, 2021
Grant dateDec 31, 2024
Priority date
Expiry dateJun 6, 2042

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C17/18
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory circuit includes a plurality of bitcells coupled to a plurality of bitlines, a plurality of wordlines, a plurality of source lines, and a control line. A first of the bitcells and a second of the bitcells are coupled to a first of the bitlines. The first bitcell is coupled to a first of the source lines. The second bitcell is coupled to a second of the source lines. The first source line is different from the second source line.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.