Inventor · Hsinchu, TW

Yih Wang

167Patents
3h-index
72Co-inventors
63Inventor score

Filing activity: Jan 3, 2017 → Jul 3, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US11404091B2 Memory array word line routing Electricity 10 Active
US10971505B1 Memory devices and methods of manufacturing thereof Electricity 4 Active
US11776595B2 Memory device with source line control Physics 3 Active
US11563015B2 Memory devices and methods of manufacturing thereof Electricity 3 Active
US11238904B1 Using embedded switches for reducing capacitive loading on a memory system Physics 3 Active
US11532752B2 Non-volatile memory device with reduced area Electricity 3 Active
US11735280B2 Memory device and operating method of the same Electricity 3 Active
US11601117B1 Sense amplifier for coupling effect reduction Electricity 3 Active
US11521663B2 Memory circuit and method of operating same Physics 3 Active
US11094387B2 Multi-fuse memory cell circuit and method Electricity 3 Active
US11018260B2 Non-volatile memory device with reduced area Electricity 3 Active
US11532746B2 Multi-bit memory storage device and method of operating same Electricity 3 Active
US11238906B2 Series of parallel sensing operations for multi-level cells Physics 2 Active
US11088151B2 4Cpp SRAM cell and array Physics 2 Active
US11756591B2 Switches to reduce routing rails of memory system Physics 2 Active
US11424233B1 Memory circuits and related methods Electricity 2 Active
US11410740B2 Multi-fuse memory cell circuit and method Electricity 2 Active
US11810635B2 Sense amplifier for coupling effect reduction Electricity 1 Active
US11094701B2 Layout structure of storage cell and method thereof Electricity 1 Active
US11681468B2 Memory device for scheduling maximum number of memory macros write operations at re-arranged time intervals Emerging Cross-Sectional Technologies 1 Active
US12014768B2 DRAM computation circuit and method Electricity 1 Active
US11653492B2 Memory devices and methods of manufacturing thereof Performing Operations; Transporting 1 Active
US11605427B2 Memory device with write pulse trimming Physics 1 Active
US11682433B2 Multiple stack high voltage circuit for memory Physics 1 Active
US11749664B2 Memory circuits Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.