Etching gas compositions, methods of forming micropatterns, and methods of manufacturing semiconductor device
US12183591B2 · kind B2 · utility
0Cited by
5References
16Claims
0Family size
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Key dates
| Filing date | Mar 23, 2022 |
| Grant date | Dec 31, 2024 |
| Priority date | — |
| Expiry date | Apr 23, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching gas composition includes a first organofluorine compound having 3 to 6 carbon atoms, and an organosulfur compound having 1 to 4 sulfur atoms. The organosulfur compound may include a carbon-fluorine (C—F) bond, a carbon-sulfur (C—S) bond, at least one carbon-carbon double (—C═C—) bond. When the etching gas composition is used, excellent etch selectivity may be obtained, and the linearity and verticality of a pattern may be greatly increased by improving line edge roughness (LER) and line width roughness (LWR) due to an improvement in the roughness of an etched surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.