In-situ semiconductor processing chamber temperature apparatus
US12183605B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2021 |
| Grant date | Dec 31, 2024 |
| Priority date | — |
| Expiry date | Sep 10, 2042 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45572
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods and systems for in-situ temperature control are provided. The method includes delivering a temperature-sensing disc into a processing region of a processing chamber without breaking vacuum. The temperature-sensing disc includes one or more cameras configured to perform IR-based imaging. The method further includes measuring a temperature of at least one region of at least one chamber surface in the processing region of the processing chamber by imaging the at least one surface using the temperature-sensing disc. The method further includes comparing the measured temperature to a desired temperature to determine a temperature difference. The method further includes adjusting a temperature of the at least one chamber surface to compensate for the temperature difference.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.