Manufacturing method of semiconductor device
US12183809B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2022 |
| Grant date | Dec 31, 2024 |
| Priority date | — |
| Expiry date | Apr 8, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/013
Abstract
A manufacturing method of a semiconductor device includes the following steps. A first recess and a second recess are formed in a first region and a second region of a semiconductor substrate, respectively. A bottom surface of the first recess is lower than a bottom surface of the second recess in a vertical direction. A first gate oxide layer and a second gate oxide layer are formed concurrently. At least a portion of the first gate oxide layer is formed in the first recess, and at least a portion of the second gate oxide layer is formed in the second recess. A removing process is performed for removing a part of the second gate oxide layer. A thickness of the second gate oxide layer is less than a thickness of the first gate oxide layer after the removing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.