Cool electron erasing in thin-film storage transistors
US12183834B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 13, 2022 |
| Grant date | Dec 31, 2024 |
| Priority date | — |
| Expiry date | Dec 3, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A storage transistor has a tunnel dielectric layer and a charge-trapping layer between a channel region and a gate electrode, wherein the charge-tapping layer has a conduction band offset that is less than the lowering of the tunneling barrier in the tunnel dielectric layer when a programming voltage is applied, such that electrons direct tunnel into the charge-trapping layer. The conduction band of the charge-trapping layer has a value between −1.0 eV and 2.3 eV. The storage transistor may further include a barrier layer between the tunnel dielectric layer and the charge-trapping layer, the barrier layer having a conduction band offset less than the conduction band offset of the charge-trapping layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.