Device and method for continuous VGF crystal growth through reverse injection synthesis

US12188145B2 · kind B2 · utility

Assignee

• THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION · CN

Inventors

• Shujie Wang · Laishui, CN
• Niefeng Sun · Laishui, CN
• Tongnian SUN · Laishui, CN
• Huisheng Liu · Laishui, CN
• Yanlei SHI · Laishui, CN
• Huimin SHAO · Laishui, CN
• Lijie FU · Laishui, CN
• Jian JIANG · Laishui, CN
• Xiaodan Zhang · Beijing, CN
• Xiaolan Li · Laishui, CN
• Yang Wang · Huangshan, CN

Key dates

• Filing date: Dec 21, 2018
• Grant date: Jan 7, 2025
• Expiry date: Apr 25, 2039

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B29/40
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The invention discloses a device and a method for continuous VGF crystal growth through reverse injection synthesis, relating to a device for preparing a semiconductor crystal and growing a single crystal, in particular to a method and a device for continuously growing the crystal in situ by using a VGF method and reverse injection synthesis. The device includes a furnace body, a crucible, a heat preservation system, a heating system, a temperature control system and a gas pressure regulation system, wherein the crucible is arranged in the furnace body, has a synthesis unit at its upper part, and has a crystal growth unit and a seed crystal unit at its lower part, and the synthesis unit is communicated with the crystal growth unit through capillary pores.