Nanopore transistor for biosensing

US12188895B2 · kind B2 · utility

Assignee

• IMEC VZW · BE

Inventors

• David Barge · Grenoble, FR
• Bert Du Bois · Blanden, BE
• Simone Severi · Leuven, BE
• Ashesh Ray Chaudhuri · Heverlee, BE

Key dates

• Filing date: Mar 11, 2022
• Grant date: Jan 7, 2025
• Expiry date: Apr 1, 2043

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B82Y40/00
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A method for forming a nanopore transistor and a nanopore transistor is provided. The method includes: (a) forming an aperture in a filler material by: (i) providing a fin comprising a semiconductor layer and a top layer; (ii) patterning the top layer to form a pillar; (iii) embedding the pillar in a filler material; (iv) removing the pillar, leaving an aperture; (v) lining the aperture with a spacer material; (b) forming a nanopore by etching through the aperture; (b) lining the nanopore with a dielectric, (c) forming a source and a drain by either: between steps a.ii and a.iii, doping the bottom semiconductor layer by using the pillar as a mask, or after step c, filling the aperture with a sealing material, thereby forming a post; removing the filler material; doping the bottom semiconductor layer by using the post as a mask; and removing the sealing material.