David Barge
6Patents
0h-index
12Co-inventors
38Inventor score
Filing activity: Apr 10, 2012 → Mar 11, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8951885B2 | Insulation wall between transistors on SOI | Electricity | 0 | Active |
| US8802575B2 | Method for forming the gate insulator of a MOS transistor | Electricity | 0 | Active |
| US11735645B2 | Method for forming a bioFET sensor including semiconductor fin or nanowire | Physics | 0 | Active |
| US12188895B2 | Nanopore transistor for biosensing | Performing Operations; Transporting | 0 | Active |
| US9412589B2 | Method for fabricating NMOS and PMOS transistors on a substrate of the SOI, in particular FDSOI, type and corresponding integrated circuit | Electricity | 0 | Active |
| US9269768B2 | Insulation wall between transistors on SOI | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.