Photonic chip and method of manufacture
US12189182B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Nov 27, 2020 |
| Grant date | Jan 7, 2025 |
| Priority date | — |
| Expiry date | Sep 22, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing a photonic chip. The method comprises providing a wafer comprising a silicon substrate, and a low refractive index layer above the silicon substrate, forming a first trench having a first height and a second trench having a second height by etching the low refractive index layer. The second height is greater than the first height and the second trench has a bottom surface that is closer to the substrate than a bottom surface of the first trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.