Memory device with dummy word line, system and method for programming thereof

US12190955B2 · kind B2 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Xueqing Huang · 红钢城街道, CN
• Wei Huang · 红钢城街道, CN
• Xing Zhou · Nanhu, CN
• Chan Wang · Nanhu, CN
• Kang Li · 红钢城街道, CN
• Cong Luo · 红钢城街道, CN
• Fengxiang Gao · 红钢城街道, CN

Key dates

• Filing date: Aug 4, 2022
• Grant date: Jan 7, 2025
• Expiry date: Jan 27, 2043

Classification

• Technology area (CPC G): Physics
• CPC primary: G11C16/3427
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

A memory device includes a memory cell array including memory blocks and a peripheral circuit coupled to the memory cell array. Each memory block includes memory strings each including dummy cells and select transistors, bit lines coupled to the memory strings, select lines including first select lines and second select lines, and one or more dummy word lines. Each select line coupled to the select transistors. The first select lines are closer to the bit lines than the second select lines. Each dummy word line is coupled to the respective dummy cells. The dummy word lines include a first dummy word line adjacent to either the first select lines or the second select lines. The peripheral circuit is configured to apply a turn-on voltage to all the first select lines, and apply a program voltage to the first dummy word line.