Semiconductor device having a current spreading region
US12191385B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2022 |
| Grant date | Jan 7, 2025 |
| Priority date | — |
| Expiry date | Mar 5, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A semiconductor device includes: a semiconductor substrate; a drift zone of a first conductivity type in the semiconductor substrate; an array of interconnected gate trenches extending from a first surface of the semiconductor substrate into the drift zone; a plurality of semiconductor mesas delimited by the array of interconnected gate trenches; a plurality of needle-shaped field plate trenches extending from the first surface into the plurality of semiconductor mesas; in the plurality of semiconductor mesas, a source region of the first conductivity type and a body region of a second conductivity type separating the source region from the drift zone; and a current spreading region of the first conductivity type at the bottom of the gate trenches and having a higher average doping concentration than the drift zone. Methods of producing the semiconductor device are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.