Method of manufacturing a semiconductor transducer device with multilayer diaphragm and semiconductor transducer device with multilayer diaphragm
US12191402B2 · kind B2 · utility
0Cited by
4References
10Claims
0Family size
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Key dates
| Filing date | Oct 24, 2019 |
| Grant date | Jan 7, 2025 |
| Priority date | — |
| Expiry date | Jul 24, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04R31/003
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In an embodiment a method includes providing a semiconductor body, forming a sacrificial layer above a surface of the semiconductor body, applying a diaphragm on the sacrificial layer and removing the sacrificial layer by introducing an etchant into openings of the diaphragm, wherein applying the diaphragm comprises applying a first layer, reducing a roughness of a surface of the first layer facing away from the semiconductor body thereby providing a processed surface, and patterning and structuring the first layer to form the openings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.