Semiconductor device fabrication

US12193229B2 · kind B2 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Bin Yuan · 红钢城街道, CN
• Zhu Yang · 红钢城街道, CN
• Xiangning Wang · 红钢城街道, CN
• Chen Zuo · Beijing, CN
• Jingjing Geng · 红钢城街道, CN
• Zhen Guo · Shanghai, CN
• Zongke Xu · 红钢城街道, CN
• Qiangwei Zhang · 红钢城街道, CN

Key dates

• Filing date: Mar 26, 2021
• Grant date: Jan 7, 2025
• Expiry date: Aug 31, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/50
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Aspects of the disclosure provide methods for fabricating semiconductor devices. In some examples, a method for fabricating a semiconductor device includes forming a stack of layers having a first region and a second region. The stack of layers includes at least a first layer. The method then forms a hard mask layer on the stack of layers in the first region. Then, the method includes patterning the stack of layers in the second region of the semiconductor device. The patterning of the stack of layers in the second region removes a portion of the stack of layers in the second region, and exposes a side of the stack of layers. The method further includes covering at least the side of the stack of layers with a second layer that has a lower remove rate than the first layer, and then the method includes removing the hard mask layer.