Three-dimensional memory device with restrained charge migration and method for forming the same
US12193233B2 · kind B2 · utility
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Key dates
| Filing date | Sep 29, 2021 |
| Grant date | Jan 7, 2025 |
| Priority date | — |
| Expiry date | Apr 23, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
A three-dimensional (3D) memory device includes a first stack structure, a first channel structure, a second stack structure, and a second channel structure. The first stack structure includes interleaved first conductive layers and first dielectric layers. The first channel structure extends through the first stack structure along a first direction. The first channel structure includes a first semiconductor channel, and a first memory film over the first semiconductor channel. The first memory film includes a storage layer. The storage layer is separated by the first dielectric layers into a plurality of sections.
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