Thermoresistive micro sensor device

US12196589B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Martin Seidl · Rechter Graben, AT
• Christian Bretthauer · Munich, DE
• Wolfgang Klein · Zorneding, DE
• Ulrich Krumbein · Rosenheim, DE
• David Tumpold · Tauberbischofsheim, DE

Key dates

• Filing date: Dec 13, 2022
• Grant date: Jan 14, 2025
• Expiry date: Jan 11, 2043

Classification

• Technology area (CPC G): Physics
• CPC primary: G01L9/0051
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A thermoresistive micro sensor device includes a semiconductor chip; a through hole, which runs through the semiconductor chip from an upper side to a lower side; electrically conductive structures, wherein the middle section of each of the electrically conductive structures spans over the through hole at the upper side of the semiconductor chip; an electrically insulating arrangement for electrically insulating the electrically conductive structures and the semiconductor chip from each other, wherein the through hole runs through the electrically insulating arrangement; and a contact arrangement including contacts, wherein each of the contacts is electrically connected to one of the first end sections or one of the second end sections, so that electrical energy is fed to at least one of the electrically conductive structures to heat the respective electrically conductive structure, and so that an electrical resistance of one of the electrically conductive structures is measured at the contact arrangement.