Patent · US Active

Semiconductor inspection device and method for inspecting semiconductor sample

US12196802B2 · kind B2 · utility

0Cited by
4References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 29, 2020
Grant dateJan 14, 2025
Priority date
Expiry dateMar 29, 2041

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01R31/307
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A semiconductor inspection device 1 having a first measurement mode and a second measurement mode includes: an electron optical system configured to irradiate a sample with an electron beam; an optical system configured to irradiate the sample with light; an electron detector configured to detect a signal electron; a photodetector 29 configured to detect signal light; a control unit 11 configured to control the electron optical system and the optical system such that an electron beam and light are emitted under a first irradiation condition in the first measurement mode, and to control the electron optical system and the optical system such that an electron beam and light are emitted under a second irradiation condition in the second measurement mode; and a computer configured to process a detection signal from the electron detector or the photodetector.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.