Plasma process monitoring apparatus using terahertz waves and monitoring method thereof
US12198893B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2024 |
| Grant date | Jan 14, 2025 |
| Priority date | — |
| Expiry date | Apr 26, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/24578
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A plasma process monitoring apparatus using terahertz waves is provided. A plasma process monitoring apparatus using terahertz waves may comprise: a first monitoring module disposed in a direction parallel to the width direction of a wafer on the outside of a plasma chamber in which the wafer is introduced and monitoring plasma formed inside the plasma chamber during a plasma process for forming a film on the wafer by using terahertz waves; and a second monitoring module disposed outside the plasma chamber in the thickness direction of the wafer so as to face the wafer and monitoring the wafer on which a film is formed on a surface through the plasma process by using the terahertz waves.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.