Epitaxial alkali halide layers for III-V substrate recycling
US12198924B2 · kind B2 · utility
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30Claims
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Key dates
| Filing date | Dec 20, 2022 |
| Grant date | Jan 14, 2025 |
| Priority date | — |
| Expiry date | Jun 28, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a method that includes depositing a first layer onto a substrate, depositing a second layer onto a surface of the first layer, and separating the substrate from the second layer, where the substrate includes a first III-V alloy, the second layer includes second III-V alloy, and the first layer includes a material that includes at least two of a Group 1A element, a Group 2A element, a Group 6A element, and/or a halogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.