Deposition system and method
US12198927B2 · kind B2 · utility
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2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2021 |
| Grant date | Jan 14, 2025 |
| Priority date | — |
| Expiry date | Dec 21, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A deposition system is provided capable of extending the chamber running time by preventing the target and other components from deformation due to thermal stress from the sputtering process by maintaining the temperature within the predetermined temperature range. The deposition system includes a substrate process chamber, a target within the substrate process chamber, and a plurality of grooves formed on the target in a circular formation. The plurality of grooves includes a first groove on a center portion of the target and a second groove on a periphery portion of the target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.