Semiconductor device and method for manufacturing the same
US12199017B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2021 |
| Grant date | Jan 14, 2025 |
| Priority date | — |
| Expiry date | Nov 12, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/343
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a nitride-based transistor, a first metal layer, a second metal layer, a third metal layer, a source pad, and a drain pad. The first metal layer is disposed over the nitride-based transistor. The second metal layer is disposed over the first metal layer. The third metal layer is disposed over the second metal layer and includes a first pattern and a second pattern which are spaced apart from each other. The source pad is immediately above the first metal layer, the second metal layer, and the first pattern of the third metal layer and is electrically coupled with the nitride-based transistor. The drain pad is immediately above the first metal layer, the second metal layer, and the second pattern of the third metal layer and is electrically coupled with the nitride-based transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.