Power semiconductor module and method for producing a power semiconductor module
US12199021B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2022 |
| Grant date | Jan 14, 2025 |
| Priority date | — |
| Expiry date | Sep 14, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2023/4087
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor module includes a substrate, having power semiconductor components, further including a housing element, and having a DC voltage connection device having a flat lead connection device and a second flat lead connection element, wherein the flat lead connection device has a first flat lead connection element encased by a plastic element of the flat lead connection device and materially bonded to the plastic element, wherein a connection section of the first flat lead connection element projects from the plastic element, a connection section of the second flat lead connection element is arranged on the plastic element or is at least partly enclosed by the plastic element and bonded to the plastic element so that a section of the plastic element is between the first flat lead connection element and the connection section of the second flat lead connection element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.