Semiconductor device including capacitor structure and method for manufacturing the same
US12199138B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2022 |
| Grant date | Jan 14, 2025 |
| Priority date | — |
| Expiry date | Jul 18, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A semiconductor device of the disclosure may include a substrate, a gate structure on the substrate, a capacitor contact structure connected to the substrate, a lower electrode connected to the capacitor contact structure, a supporter supporting a sidewall of the lower electrode, an interfacial layer covering the lower electrode and including a halogen material, a capacitor insulating layer covering the interfacial layer and the supporter, and an upper electrode covering the capacitor insulating layer. The interfacial layer may include a first surface contacting the lower electrode, and a second surface contacting the capacitor insulating layer. The halogen material of the interfacial layer may be closer to the first surface than to the second surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.