Power semiconductor device and manufacturiing method
US12199144B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Nov 22, 2022 |
| Grant date | Jan 14, 2025 |
| Priority date | — |
| Expiry date | Nov 22, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/141
Abstract
A power semiconductor device comprises a semiconductor body, a gate electrode, and an extraction electrode, wherein the semiconductor body comprises a source region of a first conductivity type, well region of a second conductivity type different from the first conductivity type at the gate electrode, a drift region which is of the first conductivity type, and a barrier region which is of the first conductivity type, the barrier region is located between the drift region and the extraction electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.