Patent · US Active

Three dimensional memory device and method for manufacturing the same

US12205665B2 · kind B2 · utility

0Cited by

1References

20Claims

0Family size

Assignee

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

Murat Kerem Akarvardar · Saratoga Springs, US
Xiaochen PENG · San Jose, US

Key dates

Filing date	Jan 17, 2023
Grant date	Jan 21, 2025
Priority date	—
Expiry date	Jul 20, 2043

Classification

Technology area (CPC G)Physics
CPC primaryG11C7/1012
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A 3D memory device is provided. The 3D memory device includes a first logic base layer, a second layer, and a third layer. The first logic base layer comprises a first type DEMUX, a plurality of second type DEMUXs coupled to the first type DEMUX, a first type MUX, and a plurality of second type MUXs coupled to the first type MUX. The second layer comprises a first group of memory units. Each of the first group of memory units is respectively coupled to a corresponding DEMUX of the plurality of second type DEMUXs and a corresponding MUX of the plurality of second type MUXs. The third layer comprises a second group of memory units. Each of the second group of memory units is respectively coupled to a corresponding DEMUX of the plurality of second type DEMUXs and a corresponding MUX of the plurality of second type MUXs.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.