Patent · US Active

Plasma processing apparatus and plasma processing method

US12205801B2 · kind B2 · utility

1Cited by
0References
7Claims
0Family size

Assignee

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Key dates

Filing dateSep 8, 2021
Grant dateJan 21, 2025
Priority date
Expiry dateAug 27, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/24564
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

In a plasma processing apparatus, a controller specifies a time point when a current starts to flow between an edge ring and a DC power supply after beginning an application of a negative DC voltage to the edge ring from the DC power supply. The controller specifies, from a voltage measurement value indicating a voltage of the edge ring at the time point, an estimate of a self-bias voltage of the edge ring generated by a supply of a radio frequency power. The controller sets a sum of an absolute value of the estimate of the self-bias voltage and a set value as an absolute value of the negative DC voltage to be applied to the edge ring by the DC power supply.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.