Patent · US Active

Gallium arsenide substrate comprising a surface oxide layer with improved surface homogeneity

US12205815B2 · kind B2 · utility

0Cited by

5References

5Claims

0Family size

Assignee

FREIBERGER COMPOUND MATERIALS GMBH · DE

Inventors

Wolfram Fliegel · Dresden, DE
Christoph Klement · Chemnitz, DE
Christa Willnauer · Dorfhain, DE
Max Scheffer-Czygan · Chemnitz, DE
André Kleinwechter · Freiberg, DE
Stefan Eichler · Dresden, DE
Berndt Weinert · Freiberg, DE
Michael Mäder · Coswig, DE

Key dates

Filing date	Oct 10, 2021
Grant date	Jan 21, 2025
Priority date	—
Expiry date	Jun 29, 2043

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/24355
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A gallium arsenide substrate which exhibits at least one surface having a surface oxide layer comprising gallium and arsenic oxides and which exhibits at least one surface having, according to an ellipsometric lateral substrate mapping with an optical surface analyzer, based on a substrate diameter of 150 mm as reference, a defect number of <6000 and/or a total defect area of less than 2 cm2, wherein a defect is defined as a continuous area of greater than 1000 μm2 having a deviation from the average measurement signal in elipsometric lateral substrate mapping with an optical surface analyzer of at least ±0.05%.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.